The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
In the article, we make a parasitic substrate model on the existing MOS model, and use this model to do simulation for each single MOS, accumulated effect circuit and some useful analog circuit.
在文章中，我们在现有的MOS器件模型的基础上再组建一个寄生的衬底模型，然后利用此模型逐一对单个MOS器件，具有累积效应的数字电路和部分基本模拟电路进行了仿真实验和分析。
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